ICANS 29, the twenty-ninth international conference on amorphous and nanocrystalline semiconductors, was held in Nanjing, China. The Conference invited more than 400 oral and poster scientific reports presented in 11 sections. Scientists from Novosibirsk State University made two presentations.
Vladimir Volodin, Doctor of Physical and Mathematical Sciences, Leading Researcher at the Rzhanov Institute of Semiconductor Physics SB RAS, and Professor at the NSU Department of Physics, presented a report on “Crystallization of amorphous Si:H films with inclusions of amorphous germanium layers under the influence of femto- and picosecond infrared lasers”. The practical significance of the scientist's research is the possibility of applying new results to create solar cells based on p-i-n amorphous silicon diodes with inclusions of germanium nanoparticles in the i-region, as well as in silicon-based light-emitting diodes to expand their range to the near-IR region.
Volodin on his presentation,
My report was devoted to femtosecond laser crystallization of multilayer structures based on amorphous silicon and germanium nanolayers. The work was conducted with researchers from the Yaroslavl Branch of the Valiev Institute of Physics and Technology RAS and the Czech Academy of Sciences Institute of Physics. The most interesting results were obtained using an infrared (IR) laser (λ=1500 nm) with a 70-femtosecond pulse duration. By varying the energy density in a pulse (the laser fluence), it was possible to implement various modes of laser annealing from selective crystallization of germanium layers to complete mixing the layers with the formation of a germanium-silicon solid solution.
NSU PhD student Fan Zhang presented an oral report on the "Formation of nanocrystals and amorphous germanium nanoclusters in GeSiOx films by electron beam annealing". Her research was devoted to annealing nonstoichiometric germanosilicate films using an electron beam. This makes it possible to locally influence a selected place in the film and create amorphous germanium clusters or germanium nanocrystals there. The conference attendees suggested that the researcher consider the possibility of using the method she described to create silicon nanocrystals in films of nonstoichiometric silicon oxides.
This article was prepared based on materials from the press service of the Rzhanov Institute of Semiconductor Physics SB RAS.
